MRF373ALR1_08 Datasheet, PDF (4/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
20
19 ^{IDQ = 500 mA}
400 mA
18 ^{300 mA}
200 mA
17
100 mA
16
V_DD = 32 Vdc
f = 860 MHz
15
1
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 2. Power Gain versus Output Power
30
62
V_DD = 32 Vdc
P_out = 75 W (CW)
η
25 _{IDQ = 200 mA}
60
IRL
20
G_ps
58
15
56
10
54
5
52
800
820
840
860
880
900
920
f, FREQUENCY (MHz)
Figure 3. Performance in Narrowband Circuit
200
20
150
15
100
C_iss
10
50
C_oss
5
C_rss
0
0
0
10
20
30
40
50
60
V_DS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Voltage
MRF373ALR1 MRF373ALSR1
4
Freescale Semiconductor
RF Product Device Data