MRF373ALR1_08 Datasheet, PDF(2/10 Page) Freescale Semiconductor, Inc

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MRF373ALR1_08 Datasheet, PDF (2/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

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Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Off Characteristics

Drain- Source Breakdown Voltage

(VGS = 0 Vdc, ID =1 Î¼A)

V(BR)DSS

Zero Gate Voltage Drain Current

(VDS = 32 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

IGSS

On Characteristics

Gate Threshold Voltage

(VDS = 10 V, ID = 200 Î¼A)

VGS(th)

Gate Quiescent Voltage

(VDS = 32 V, ID = 100 mA)

VGS(Q)

2.5

Drain- Source On - Voltage

(VGS = 10 V, ID = 3 A)

VDS(on)

Dynamic Characteristics

Input Capacitance

(VDS = 32 V, VGS = 0, f = 1 MHz)

Ciss

Output Capacitance

(VDS = 32 V, VGS = 0, f = 1 MHz)

Coss

Reverse Transfer Capacitance

(VDS = 32 V, VGS = 0, f = 1 MHz)

Crss

Functional Characteristics (50 ohm system)

Common Source Power Gain

Gps

16.5

(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)

Drain Efficiency

Î·

(VDD = 32 V, Pout = 75 W CW, IDQ = 200 mA, f = 860 MHz)

Typ

2.9

3.3

0.41

98.5

18.2

Max

Unit

Vdc

Î¼Adc

Vdc

4.5

Vdc

0.45

Vdc

MRF373ALR1 MRF373ALSR1

Freescale Semiconductor

RF Product Device Data

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