MRF373ALR1_08 Datasheet, PDF (1/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
• Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60%
D
• Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz,
75 Watts CW Output Power
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal
Impedance Parameters
G
• Low Gold Plating Thickness on Leads.
L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
S
• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
Document Number: MRF373A
Rev. 7, 9/2008
MRF373ALR1
MRF373ALSR1
470 - 860 MHz, 75 W, 32 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B - 05, STYLE 1
NI - 360
MRF373ALR1
CASE 360C - 05, STYLE 1
NI - 360S
MRF373ALSR1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
MRF373ALR1
MRF373ALSR1
MRF373ALR1
MRF373ALSR1
MRF373ALR1
MRF373ALSR1
Symbol
V_DSS
V_GS
P_D
T_stg
T_C
T_J
Symbol
R_θJC
Value
- 0.5, +70
- 0.5, +15
197
1.12
278
1.59
- 65 to +150
150
200
Value
0.89
0.63
Class
1 (Minimum)
M2 (Minimum)
M1 (Minimum)
Unit
Vdc
Vdc
W
W/°C
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2008. All rights reserved.
Freescale Semiconductor
RF Product Device Data
MRF373ALR1 MRF373ALSR1
1