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MRF21030LR3 Datasheet, PDF (4/8 Pages) Motorola, Inc – RF Power Field Effect Transistors | |||
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TYPICAL CHARACTERISTICS
60
â5
50
â10
IRL
40
â15
η
30 VDD = 28 Vdc, Pout = 30 W (PEP), IDQ = 250 mA
â20
TwoâTone Measurement, 100 kHz Tone Spacing
20
Gps
â25
10
â30
IMD
0
â35
2080 2100 2120 2140 2160 2180 2200
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
30
â20
VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz
25 Channel Spacing (Channel Bandwidth):
â30
4.096 MHz (5 MHz)
20
â40
ACPR
15
â50
Gps
η
10
â60
5
â70
0
1
2
3
4
5
6
Pout, OUTPUT POWER (WATTS Avg.) CDMA
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
â25
VDD = 28 Vdc, f = 2140 MHz
â30
TwoâTone Measurement,
100 kHz Tone Spacing
â35
200 mA
â40
250 mA
â45
400 mA
300 mA
â50
350 mA
â55
1.0
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
16
400 mA
15
350 mA
300 mA
250 mA
14
200 mA
VDD = 28 Vdc, f = 2140 MHz
TwoâTone Measurement, 100 kHz Tone Spacing
13
1.0
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
MRF21030LR3 MRF21030LSR3
4
â20
VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz
TwoâTone Measurement,
â30 100 kHz Tone Spacing
3rd Order
â40
â50
5th Order
â60
7th Order
â70
1.0
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
15
â22
â24
14.5
â26
Gps
â28
14
â30
IMD
â32
13.5
13
20
Pout = 30 W (PEP)
IDQ = 250 mA, f = 2140 MHz
TwoâTone Measurement, 100 kHz Tone Spacing
22
24
26
28
30
32
VDD, DRAIN VOLTAGE (VOLTS)
â34
â36
â38
34
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
RF Device Data
Freescale Semiconductor
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