MRF21030LR3 Datasheet, PDF (1/8 Pages) Motorola, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Wideband CDMA Performance: - 45 dB ACPR @ 4.096 MHz, 28 Volts
Output Power — 3.5 Watts
Power Gain — 14 dB
Efficiency — 15%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW
Output Power
Features
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Document Number: MRF21030
Rev. 12, 5/2006
MRF21030LR3
MRF21030LSR3
2200 MHz, 30 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF21030LR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
CASE 465F - 04, STYLE 1
NI - 400S
MRF21030LSR3
Symbol
V_DSS
V_GS
P_D
T_stg
T_C
T_J
Symbol
R_θJC
Value
- 0.5, +65
- 0.5, +15
83.3
0.48
- 65 to +150
150
200
Value
2.1
Class
2 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF21030LR3 MRF21030LSR3
1