MRF21030LR3 Datasheet, PDF (2/8 Pages) Motorola, Inc – RF Power Field Effect Transistors

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Off Characteristics
Drain- Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 20 μA)
V_(BR)DSS
65
Zero Gate Voltage Drain Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
I_DSS
—
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 100 μAdc)
V_GS(th)
2
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 250 mA)
V_GS(Q)
2
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 1 Adc)
V_DS(on)
—
Forward Transconductance
(V_DS = 10 Vdc, I_D = 1 Adc)
g_fs
—
Dynamic Characteristics
Input Capacitance (Including Input Matching Capacitor in Package) ⁽¹⁾
C_iss
—
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
Output Capacitance ⁽¹⁾
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
C_oss
—
Reverse Transfer Capacitance
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
C_rss
—
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
G_ps
—
Two - Tone Drain Efficiency
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
η
—
3rd Order Intermodulation Distortion
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IMD
—
Input Return Loss
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IRL
—
Two - Tone Common - Source Amplifier Power Gain
G_ps
12
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two - Tone Drain Efficiency
η
31
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
3rd Order Intermodulation Distortion
IMD
—
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Input Return Loss
IRL
—
(V_DD = 28 Vdc, P_out = 30 W PEP, I_DQ = 250 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
1. Part is internally matched both on input and output.
Typ
Max
Unit
—
—
Vdc
—
1
μAdc
—
1
μAdc
3
4
Vdc
3.3
4.5
Vdc
0.29
0.4
Vdc
2
—
S
98.5
—
pF
37
—
pF
1.3
—
pF
13
—
dB
33
—
%
- 30
—
dBc
- 13
—
dB
13
—
dB
33
—
%
- 30
- 27.5
dBc
- 13
-9
dB
MRF21030LR3 MRF21030LSR3
2
RF Device Data
Freescale Semiconductor