K30P144M100SF2 Datasheet, PDF (32/67 Pages) Freescale Semiconductor, Inc – K30 Sub-Family Data Sheet

Peripheral operating requirements and behaviors
Table 20. NVM reliability characteristics (continued)
Symbol Description
Min.
Typ.¹
Max.
Unit
Notes
t_nvmretee10 Data retention up to 10% of write endurance
10
TBD
—
years
2
t_nvmretee1 Data retention up to 1% of write endurance
15
TBD
—
years
2
n_nvmwree16 Write endurance with an EEPROM backup to
35 K
TBD
—
writes
4
FlexRAM ratio of 16
n_nvmwree128 Write endurance with an EEPROM backup to
315 K
TBD
—
writes
4
FlexRAM ratio of 128
n_nvmwree512 Write endurance with an EEPROM backup to
1.27 M
TBD
—
writes
4
FlexRAM ratio of 512
n_nvmwree4k Write endurance with an EEPROM backup to
10 M
TBD
—
writes
4
FlexRAM ratio of 4096
y _{nnvmwree32k Write endurance with an EEPROM backup to}
80 M
TBD
—
writes
4
FlexRAM ratio of 32,768
r 1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to
25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin
a _EB618.
2. Data retention is based on T_javg = 55°C (temperature profile over the lifetime of the application).
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ T_j ≤ 125°C
in ^{4. Write endurance represents the number of writes to FlexRAM at -40°C ≤Tj ≤ 125°C influenced by the cycling endurance of}
the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum value assumes all
byte-writes to FlexRAM.
lim ^{6.4.1.5 Write Endurance to FlexRAM for EEPROM}
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
e _{The bytes not assigned to data flash via the FlexNVM partition code are used by the}
r ^{FTFL to obtain an effective endurance increase for the EEPROM data. The built-in}
EEPROM record management system raises the number of program/erase cycles that can
P ^{be attained prior to device wear-out by cycling the EEPROM data through a larger}
EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size are used throughout
the entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
EEPROM – 2 × EEESPLIT × EEESIZE
EEESPLIT × EEESIZE
× Write_efficiency × n_nvmcycd
where
• Writes_subsystem — minimum writes to FlexRAM for subsystem (each subsystem
can have different endurance)
K30 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
32
Preliminary
Freescale Semiconductor, Inc.