MPXV5050VC6T1 Datasheet, PDF (3/8 Pages) Freescale Semiconductor, Inc – High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

FLUOROSILICONE
GEL DIE COAT
WIRE BOND
LEAD
FRAME
DIE
P1
STAINLESS
STEEL CAP
THERMOPLASTIC
CASE
P2
DIFFERENTIAL SENSING ELEMENT
DIE BOND
Figure 2. Cross-Sectional Diagram
(not to scale)
+5 V
1.0 µF
V_out
V_s
IPS
0.01 µF
GND
OUTPUT
470 pF
Figure 3. Typical Application Circuit
(Output Source Current Operation)
TRANSFER FUNCTION MPXV5050VC6T1
Transfer Function MPXV5050VC Series
5
Transfer Function:
V_out = V_S x (0.018 x P + 0.92) ± (PE x TM x 0.018 x V_s)
4
V_s = 5.0 ± 0.25 vdc
PE = 1.25
TM = 1
Temperature = 0 to 85°C
3
MAX
2
1
TYPICAL
MIN
0
–50
–40
–30
–20
–10
Pressure (kPa)
Figure 4. Output versus Absolute Pressure
0
Offset
(Typ)
Figure 4 shows the sensor output signal relative to
pressure input. Typical minimum and maximum output
curves are shown for operation over 0 to 85°C temperature
range. The output will saturate outside of the rated pressure
range.
A fluorosilicone gel isolates the die surface and wire bonds
from the environment, while allowing the pressure signal to
be transmitted to the silicon diaphragm. The
MPXV5050VC6T1 pressure sensor operating
characteristics, internal reliability and qualification tests are
based on use of dry air as the pressure media. Media other
than dry air may have adverse effects on sensor performance
and long-term reliability. Contact the factory for information
regarding media compatibility in your application.
Sensors
Freescale Semiconductor
MPXV5050VC6T1
3