MC9S08QE32 Datasheet, PDF (28/44 Pages) Freescale Semiconductor, Inc – 8-Bit HCS08 Central Processor Unit (CPU)

Electrical Characteristics
2 _{1 LSB = (VREFH – VREFL)/2}N
3 _{Monotonicity and No-Missing-Codes guaranteed in 10 bit and 8 bit modes}
4 _{Based on input pad leakage current. Refer to pad electricals.}
3.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for flash memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply. For more detailed
information about program/erase operations, see MC9S08QE32 Series Reference Manual Chapter 4 Memory.
Table 17. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Supply voltage for program/erase
–40°C to 85°C
V_prog/erase
1.8
—
3.6
V
D Supply voltage for read operation
D Internal FCLK frequency¹
V_Read
1.8
—
3.6
V
f_FCLK
150
—
200
kHz
D Internal FCLK period (1/FCLK)
P Byte program time (random location)⁽²⁾
P Byte program time (burst mode)⁽²⁾
P Page erase time²
P Mass erase time⁽²⁾
Byte program current³
Page erase current³
Program/erase endurance⁴
C
T_L to T_H = –40°C to 85°C
T = 25°C
t_Fcyc
t_prog
t_Burst
t_Page
t_Mass
R_IDDBP
R_IDDPE
5
—
—
10,000
—
9
4
4000
20,000
4
6
—
100,000
6.67
—
—
—
—
μs
t_Fcyc
t_Fcyc
t_Fcyc
t_Fcyc
mA
mA
cycles
C Data retention⁵
t_{D_ret}
15
100
—
years
1 _{The frequency of this clock is controlled by software setting.}
2 _{These values are hardware state machine controlled. User code does not need to count cycles. This information is}
supplied for calculating approximate time to program and erase.
3 _{The program and erase currents are additional to the standard run IDD. These values are measured at room temperatures}
with V_DD = 3.0 V, bus frequency = 4.0 MHz.
4 _{Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how}
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
5 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and}
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
MC9S08QE32 MCU Series Data Sheet, Rev. 1
28
Freescale Semiconductor