MC9S08SE8 Datasheet, PDF (27/38 Pages) Freescale Semiconductor, Inc – 8-Bit HCS08 Central Processor Unit

Ordering Information
3.11 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see the Memory section in the reference
manual.
Table 15. Flash Characteristics
Num C
Characteristic
Symbol
Min
Typical
Max
Unit
1
D Supply voltage for program/erase
V_prog/erase
2.7
—
5.5
V
2
D Supply voltage for read operation
V_Read
2.7
—
5.5
V
3
D Internal FCLK frequency¹
f_FCLK
150
—
200
kHz
4
D Internal FCLK period (1/FCLK)
t_Fcyc
5
P Byte program time (random location)²
t_prog
6
P Byte program time (burst mode)²
t_Burst
7
P Page erase time²
t_Page
8
P Mass erase time²
t_Mass
Program/erase endurance³
9
C
T_L to T_H = –40 °C to 125 °C
T = 25 °C
n_FLPE
5
10,000
—
9
4
4000
20,000
—
100,000
6.67
—
μs
t_Fcyc
t_Fcyc
t_Fcyc
t_Fcyc
cycles
10
C Data retention⁴
t_{D_ret}
15
100
—
years
1 _{The frequency of this clock is controlled by a software setting.}
2 _{These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for}
calculating approximate time to program and erase.
3 _{Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how}
Freescale defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
4 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated}
to 25 °C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
4 Ordering Information
This chapter contains ordering information for the device numbering system.
Example of the device numbering system:
MC 9 S08 SE 8 C XX E
Status
(MC = Fully Qualified)
Memory
(9 = Flash-based)
Core
Family
RoHS compliance indicator (E = yes)
Package designator (see Table 16)
Temperature range (C = –40 °C to 85 °C)
(V = –40 °C to 105 °C)
(M = –40 °C to 125 °C)
Memory Size (in KB)
MC9S08SE8 Series MCU Data Sheet, Rev. 3
Freescale Semiconductor
27