MC9S08FL16 Datasheet, PDF (26/34 Pages) Freescale Semiconductor, Inc – 8-Bit S08 Central Processor Unit (CPU)

Electrical Characteristics
Table 13. 8-Bit ADC Characteristics (V_REFH = V_DDA, V_REFL = V_SSA) (continued)
C Characteristic
Conditions
Symb
Min
Typ¹
Max
Unit
Comment
D
Quantization
Error
8-bit mode
E_Q
—
—
±0.5 _LSB²
D
Input Leakage
Error
8-bit mode
E_IL
—
±0.1
±1
LSB²
Pad leakage²
* R_AS
1 _{Typical values assume VDDA = 5.0 V, Temp = 25 °C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for reference}
only and are not tested in production.
2 _{Based on input pad leakage current. Refer to pad electricals.}
5.11 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see the Memory section.
Table 14. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Supply voltage for program/erase
–40 °C to 85 °C
V_prog/erase
4.5
—
5.5
V
D Supply voltage for read operation
D Internal FCLK frequency¹
V_Read
4.5
—
5.5
V
f_FCLK
150
—
200
kHz
D Internal FCLK period (1/FCLK)
P Byte program time (random location)²
P Byte program time (burst mode)²
P Page erase time²
P Mass erase time²
Byte program current³
Page erase current³
Program/erase endurance⁴
C
T_L to T_H = –40 °C to 85 °C
T = 25 °C
t_Fcyc
5
t_prog
t_Burst
t_Page
t_Mass
RI_DDBP
—
RI_DDPE
—
—
—
9
4
4000
20,000
4
6
10,000
6.67
—
—
—
μs
t_Fcyc
t_Fcyc
t_Fcyc
t_Fcyc
mA
mA
cycles
C Data retention⁵
t_{D_ret}
5
100
—
years
1 _{The frequency of this clock is controlled by a software setting.}
2 _{These values are hardware state machine controlled. User code does not need to count cycles. This information supplied}
for calculating approximate time to program and erase.
3 _{The program and erase currents are additional to the standard run IDD. These values are measured at room temperatures}
with V_DD = 5.0 V, bus frequency = 4.0 MHz.
4 _{Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how}
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
MC9S08FL16 Series Data Sheet, Rev. 2
26
Freescale Semiconductor