MMA25312BT1 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor Technology (InGaP HBT)

Table 4. Electrical Characteristics (V_CC1 = V_CC2 = V_BIAS = 5 Vdc, 2500 MHz, T_A = 25°C, 50 ohm system, in Freescale CW Application
Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Input Return Loss (S11)
G_p
24.5
26
—
dB
IRL
—
--12
—
dB
Output Return Loss (S22)
ORL
—
--13
—
dB
Power Output @ 1dB Compression
P1dB
—
31
—
dBm
Third Order Output Intercept Point, Two--Tone CW
OIP3
—
40
—
dBm
Noise Figure
Supply Current ⁽¹⁾
Supply Voltage ⁽¹⁾
Table 5. ESD Protection Characteristics
NF
—
3.8
—
dB
I_CQ
110
124
138
mA
V_CC
—
5
—
V
Test Methodology
Class
Human Body Model (per JESD 22--A114)
2
Machine Model (per EIA/JESD 22--A115)
A
Charge Device Model (per JESD 22--C101)
IV
Table 6. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
1
260
°C
1. For reliable operation, the junction temperature should not exceed 150°C.
V_BA1
V_BIAS
RF_in
V_BA2
V_CC1
V_CC1
BIAS
CIRCUIT
PDET
Figure 1. Functional Block Diagram
RF_out
RF_out
V_CC2
V_BA2 V_CC1 V_CC1
12 11 10
V_BA1 1
V_{BIAS 2}
RF_in 3
9 RF_out
8 RFout
7 VCC2
456
N.C. N.C. PDET
Figure 2. Pin Connections
MMA25312BT1
2
RF Device Data
Freescale Semiconductor, Inc.