MMA25312BT1 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor Technology (InGaP HBT)

Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMA25312B is a high efficiency InGaP HBT amplifier designed for
use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and
wireless broadband mesh networks. It is suitable for applications with
frequencies from 2300 to 2700 MHz using simple external matching
components with a 3 to 5 volt supply.
Document Number: MMA25312B
Rev. 0, 9/2012
MMA25312BT1
2300--2700 MHz, 26 dB
31 dBm
InGaP HBT
Features
• Frequency: 2300--2700 MHz
• P1dB: 31 dBm @ 2500 MHz
• Power Gain: 26 dB @ 2500 MHz
• OIP3: 40 dBm @ 2500 MHz
• Active Bias Control (On--chip)
• Single 3 to 5 Volt Supply
• Single--ended Power Detector
• Cost--effective QFN Surface Mount Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.
CASE 2131--01
QFN 3×3
PLASTIC
Table 1. Typical CW Performance ⁽¹⁾
Characteristic
Symbol 2300 2500 2700 Unit
MHz MHz MHz
Small--Signal Gain
(S21)
G_p
26 26 24.5 dB
Input Return Loss
(S11)
IRL
--14 --12 --12 dB
Output Return Loss
(S22)
ORL
--11 --13 --15 dB
Power Output @
P1dB 30 31 29.8 dBm
1dB Compression
1. V_CC1 = V_CC2 = V_BIAS = 5 Vdc, T_A = 25°C, 50 ohm system, CW
Application Circuit
Table 2. Maximum Ratings
Rating
Symbol Value
Unit
Supply Voltage
V_CC
6
V
Supply Current
I_CC
550
mA
RF Input Power
P_in
30
dBm
Storage Temperature Range
T_stg --65 to +150 °C
Junction Temperature ⁽²⁾
T_J
150
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics
Characteristic
Symbol
Value ⁽³⁾
Thermal Resistance, Junction to Case
Case Temperature 91°C, V_CC1 = V_CC2 = V_BIAS = 5 Vdc
R_θJC
92
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
°C/W
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMA25312BT1
1