MC68882EI33A Datasheet, PDF (16/26 Pages) Freescale Semiconductor, Inc – HCMOS Enhanced Floating-Point Coprocessor

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Freescale Semiconductor, Inc.
MAXIMUM RATINGS
Rating
Supply Voltage
Input Voltage
Operating Temperature
Storage Temperature
ELECTRICAL SPECIFICATIONS
Symbol
Value
Unit
Vcc
–0.3 to +7.0
v
~n
–0.3 to +7.0
v
TA
o to 70
‘c
T~tq
–55to +150
‘c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Ceramic
Junction to Ambient
Junction to Case
Symbol
9JA
8JC
Value
33
15
Rating
“cm
POWER CONSIDERATIONS
The average chip-junction temperature, TJ, in ‘C can
<,*,:b’+~
The total thermdk,g@:.?W. stance of a package (0._-jA_. ) can be
separated in,t$’{~&o components, OJC and eCA, repre-
be obtained from:
senting th@.*Q~#$i~eFtoheat flow from the semiconductor
where:
TJ=TA+(PD06JA)
(1)
junctio,$.t$,th~ package (case) surface (eJc) and from the
case tq $he+Dutside ambient (OCA). These terms are re-
TA = Ambient Temperature, ‘C
8JA = Package Thermal Resistance,
Junction-to-Ambient, OC/W
lat@ b~she equation:
.ti.,.$~,m
... ^{~s~, ,}
eJA= 6JC+ 6CA
J #“’S$JC is device related and cannot be influenced
(4)
by the
pD = PINT+ Pi/0
PINT = ICC x VCC, Watts — Chip Internal Power
3,J$&&r. However, 6CA is user dependent and can be min-
+.+,~?$!t,.:,.,...
%,+$~tlmized by such thermal management techniques as heat
Pi/0
= Power Dissipation on Input
Pins — User Determined
and Output
..,.,>1:.
.’.::’k. ^‘
sinks, ambient air cooling, and-thermal convention. Thus,
good thermal management on the p,art of the user can
For most applications P1/O<PINT and can be ~~$~q~ed.
Significantly reduce 6CA so that eJA approximately
equals
The following is an approximate relation~~f~%ween
PD and TJ (if Pi/0 is neglected):
,,:.+?;,.:\,.:
eJc. Substitution of eJc for eJA in equation (1) will result
in a lower semiconductor junction temperature.
PD = K+ (TJ + 273”C] ~~’$!?j’~>
Solving equations (1) and (2) for.@~~#l@
(2)
Values for thermal resistance presented in this docu-
ment, unless estimated, were derived using the proce-
K= PD q (TA+ 273°C) t8j~$PD2
(3)
where K is a constant pertainiq~~~~~ particular part. K
dure described in Motorola Reliability Report 7843,
“Thermal Resistance Measurement Method for MC68XX
can be determined from e~M&~A&~(3) by measurin9 pD
Microcomponent Devices,” and are provided for design
(at equilibrium) for a kno~n ~~. Using this value of K,
purposes only, Thermal measurements are complex and
the values of PD and T&#~~~~&’obtained by solving equa-
dependent on procedure and setup, User derived values
tions (1) and (2) ite$at~~l&%or any value of TA.
y.,,.,;J~::,\~{‘<.:.d\~?;~,:*!”.\,.},\,\{.>\.
for thermal resistance may differ.
DC ELECTRl_.&_.,t#&_.,j_,.&_.1A_, RACTERISTICS
(Vcc =5.o Vdct5%; GND = O Vdc; TA= O°Cto 700C)
,,*.,:..4...>.g_>^{.*.l~\,,...,.*+}
Characteristic
Symbol
Min
Max
lnpu#Wg~+oltage
vlH
2.0
Vcc
?k~:~’:~dw \,oltage
—
~~
$ ~ji~t Leakage Current @t5.25 V
vlL
GND –0,5
0.8
—— ——
CLK, RESET, R/~, AO-A4, CS, DS, AS, SIZE Iin
—
10
Unit
v
v
WA
~Hi-Z (Off State) ,Input Current ~1.2.4 V/O.4V
Output High Voltage (IOH = -400 wA)
~,
m,
DO-D31 ITSI
—
~,
m,
DO-D31 vOH
2.4
20
FA
—
v
Output Low Voltage (iOL = 5,3 mA)
~,
~,
DO-D31 vOL
—
0.5
v
Output Low Current (VOL= GND)
SENSE IOL
—
500
PA
Power Dissipation
pD
—
0.75
w
Capacitance* (Vin =0, TA=250C, f= 1 MHz)
Output Load Capacitance
Cin
—
CL
—
20
pF
130
pF
*Capacitance is periodically sampled rather than 10070tested.
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