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MC20XS4200 Datasheet, PDF (13/60 Pages) Freescale Semiconductor, Inc – Dual 24 V, 20 mOhm High Side Switch
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Unless specified otherwise: 8.0 V ≤ VPWR ≤ 36 V, 3.0 V ≤ VDD ≤ 5.5 V, - 40 °C ≤ TA ≤ 125 °C, GND = 0 V. Typical values are
average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
Parameter
Symbol
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) (CONTINUED)
Current Sense Clamping Voltage (condition: R(CSNS) > 10 kOhm)
VCL(CSNS)
5.5
–
7.5
V
Open-load detection Current threshold in OFF state (20)
IOLD(OFF)
30
–
100
μA
Open-load Fault Detection Voltage Threshold (20)
VOLD(THRES)
4.0
–
5.5
V
Open-load detection Current threshold in ON state (see Open-Load
IOLD(ON)
mA
Detection In On State (OL_ON)):
CSNS_ratio bit = 0
CSNS_ratio bit = 1 (fast slew rate SR[1:0] = 10 mandatory for this
function)
60
150
300
5.0
7.0
10
Time period of the periodically activated open-load in ON state detection
for CSNS_ratio bit = 1
tOLLED
105
150
195
ms
Output Shorted-to-VPWR Detection Voltage Threshold (channel in OFF
VOSD(THRES) VPWR-1.2 VPWR-0.8 VPWR-0.4
V
state)
Switch turn-on threshold for Negative Output Voltages (protects against
negative transients) - (measured at IOUT = 100mA, Channel in OFF state)
Switch turn-on threshold for Negative Output Voltages difference from
one channel to the other in parallel mode - (measured at IOUT = 100mA,
Channel in OFF state)
VCL
ΔVCL
-35
–
-24
V
V
-2.0
–
+2.0
Switching State (On/Off) discrimination thresholds
VHS_TH
0.45*VPWR 0.5*VPWR 0.55*VPWR
V
Shutdown temperature (Power MOSFET junction; 6.0 V < VPWR < 58 V)
TSD
160
175
190
°C
Notes:
20. Minimum required value of Open-load impedance for detection of Open-load in OFF-state: 200 kΩ.(VOLD(THRES) = VHS @ IOLD(OFF))
Analog Integrated Circuit Device Data
Freescale Semiconductor
20XS4200
13