33988 Datasheet, PDF (12/34 Pages) Freescale Semiconductor, Inc – Dual Intelligent High-current Self-protected Silicon High Side Switch (8.0mΩ)

ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics (continued)
Characteristics noted under conditions 4.5V ≤ V_DD ≤ 5.5V, 6.0V ≤ V_PWR ≤ 27V, -40°C ≤ T_A ≤ 125°C, unless otherwise noted.
Typical values noted reflect the approximate parameter mean at T_A = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT TIMING (CONTINUED)
Overcurrent Detection Blanking Time (OCLT [1:0])
00
01
10
11
t _OCL0
t _OCL1
t _OCL2
t _OCL3
ms
108
155
202
7.0
10
13
0.8
1.2
1.6
0.08
0.15
0.25
Overcurrent High Detection Blanking Time
CS to CSNS Valid Time⁽²²⁾
t _OCH
1.0
10
20
μs
t CNS_VAL
–
–
10
μs
HS1 Switching Delay Time (OSD[2:0])
000
001
010
011
100
101
110
111
t _OSD0
t _OSD1
t _OSD2
t _OSD3
t _OSD4
t _OSD5
t _OSD6
t _OSD7
ms
–
0
–
55
75
95
110
150
190
165
225
285
220
300
380
275
375
475
330
450
570
385
525
665
HS0 Switching Delay Time (OSD[2:0])
000
001
010
011
100
101
110
111
Watchdog Timeout (WD [1:0])⁽²³⁾
00
01
10
11
t _OSD0
t _OSD1
t _OSD2
t _OSD3
t _OSD4
t _OSD5
t _OSD6
t _OSD7
t _WDTO0
t _WDTO1
t _WDTO2
t _WDTO3
–
–
110
110
220
220
330
330
434
207
1750
875
0
0
150
150
300
300
450
450
620
310
2500
1250
ms
–
–
190
190
380
380
570
570
ms
806
403
3250
1625
Notes
22. Time necessary for the CSNS to be within ±5% of the targeted value.
23. Watchdog timeout delay measured from the rising edge of WAKE to RST from a sleep state condition to output turn-ON with the output
driven OFF and FSI floating. The values shown are for WDR setting of [00]. The accuracy of t_WDTO is consistent for all configured
watchdog timeouts.
33988
12
Analog Integrated Circuit Device Data
Freescale Semiconductor