33988 Datasheet, PDF (11/34 Pages) Freescale Semiconductor, Inc – Dual Intelligent High-current Self-protected Silicon High Side Switch (8.0mΩ)

ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 4. Dynamic Electrical Characteristics
Characteristics noted under conditions 4.5V ≤ V_DD ≤ 5.5V, 6.0V ≤ V_PWR ≤ 27V, -40°C ≤ T_A ≤ 125°C, unless otherwise noted.
Typical values noted reflect the approximate parameter mean at T_A = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT TIMING
Output Rising Slow Slew Rate A (DICR D3 = 0)⁽¹⁸⁾
9.0V < V_PWR < 16V
Output Rising Slow Slew Rate B (DICR D3 = 0)⁽¹⁹⁾
9.0V < V_PWR < 16V
Output Rising Fast Slew Rate A (DICR D3 = 1)⁽¹⁸⁾
9.0V < V_PWR < 16V
Output Rising Fast Slew Rate B (DICR D3 = 1)⁽¹⁹⁾
9.0V < V_PWR < 16V
Output Falling Slow Slew Rate A (DICR D3 = 0)⁽¹⁸⁾
9.0V < V_PWR < 16V
Output Falling Slow Slew Rate B (DICR D3 = 0)⁽¹⁹⁾
9.0V < V_PWR < 16V
Output Falling Fast Slew Rate A (DICR D3 = 1)⁽¹⁸⁾
9.0V < V_PWR < 16V
Output Falling Fast Slew Rate B (DICR D3 = 1)⁽¹⁹⁾
9.0V < V_PWR < 16V
Output Turn-ON Delay Time in Fast/Slow Slew Rate⁽²⁰⁾
DICR = 0, DICR = 1
Output Turn-OFF Delay Time in Slow Slew Rate Mode⁽²¹⁾
DICR = 0
Output Turn-OFF Delay Time in Fast Slew Rate Mode⁽²¹⁾
DICR = 1
SR_{RA_SLOW}
V/μs
0.3
1.0
2.0
SR_{RB_SLOW}
0.12
0.4
V/μs
1.2
SR_{RA_FAST}
V/μs
0.6
1.6
6.4
SR_{RB_FAST}
0.12
0.4
V/μs
4.8
SR_{FA_SLOW}
V/μs
0.3
1.0
2.0
SR_{FB_SLOW}
0.12
0.4
V/μs
1.2
SR_{FA_FAST}
V/μs
1.2
3.2
6.4
SR_{FB_FAST}
V/μs
0.4
1.4
4.8
t _DLY(ON)
μs
1.0
8.0
30
t _{DLY_SLOW(OFF)}
5
μs
57
125
t _{DLY_FAST(OFF)}
μs
2.0
15
50
Direct Input Switching Frequency (DICR D3 = 0)
f _PWM
–
300
–
Hz
Notes
18. Rise and Fall Slew Rates A measured across a 5.0Ω resistive load at high side output = 0.5V to V_PWR -3.5V. These parameters are
guaranteed by process monitoring.
19. Rise and Fall Slew Rates B measured across a 5.0Ω resistive load at high side output = V_PWR -3.5V to V_PWR -0.5V. These parameters
are guaranteed by process monitoring.
20. Turn-ON delay time measured from rising edge of IN[0:1] signal that would turn the output ON to V_HS[0:1] = 0.5V with R_L = 5.0Ω resistive
load.
21. Turn-OFF delay time measured from falling edge that would turn the output OFF to V_HS[0:1] = V_PWR -0.5V with R_L = 5.0Ω resistive load.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33988
11