MPXHZ6116A Datasheet, PDF (1/10 Pages) Freescale Semiconductor, Inc – Media Resistant Integrated Silicon Pressure Sensor for Measuring Absolute Pressure, On-Chip Signal Conditioned, Temperature Compensated and Calibrated

Freescale Semiconductor
Media Resistant Integrated Silicon
Pressure Sensor for Measuring
Absolute Pressure, On-Chip Signal
Conditioned, Temperature
Compensated and Calibrated
The MPXHZ6116A series pressure sensor integrates on-chip, bipolar op
amp circuitry and thin film resistor networks to provide a high output signal
and temperature compensation. The sensor’s packaging has been
designed to provide resistance to high humidity conditions as well as
common automotive media. The small form factor and high reliability of on-
chip integration make this sensor a logical and economical choice for the
system designer.
The MPXHZ6116A series pressure sensor is a state-of-the-art,
monolithic, signal conditioned sensor designed for a wide range of
applications, but particularly those employing a microcontroller or
microprocessor with A/D inputs. This piezoresistive transducer combines
advanced micromachining techniques, thin-film metallization, and bipolar
processing to provide an accurate, high level analog output signal that is
proportional to the applied pressure.
Features
• Resistant to High Humidity and Common Automotive Media
• 1.43% Maximum Error over 0 to 85°C
• Temperature Compensated from -40°C to +125°C
• Durable Thermoplastic (PPS) Surface Mount Package (SSOP)
• Ideally Suited for Microprocessor or Microcontroller-Based Systems
Pressure
MPXHZ6116A
Rev 2, 06/2010
MPXHZ6116A
Series
20 to 115 kPa (2.9 to 16.7 psi)
0.399 to 4.645 V Output
ORDERING INFORMATION
Device Name
Package
Options
Case
No.
# of Ports
None Single Dual
Super Small Outline Package (Media Resistant Gel) (MPXHZ6116A Series)
Gauge
MPXHZ6116A6U
Rail
1317
•
MPXHZ6116A6T1
Tape & Reel
1317
•
Pressure Type
Differential Absolute
•
•
Device Marking
MPXHZ6116A
MPXHZ6116A
SUPER SMALL OUTLINE PACKAGE
MPXHZ6116A6U/6T1
CASE 1317
© Freescale Semiconductor, Inc., 2009, 2010. All rights reserved.