FMBT3904DW1 Datasheet, PDF (7/11 Pages) Formosa MS – Dual NPN Transistor

Dual NPN Transistor
Formosa MS
Rating and characteristic curves (FMBT3904DW1 & FMBT3904DW2)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ=+125 C
1.0
+25 C
VCE=1.0V
0.7
-55 C
0.5
0.3
0.2
0.1
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
IC COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
20 30
50 70 100
200
1.0
0.8
0.6
0.4
0.2
0
0.01
Ic=1.0mA
10mA
30mA
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
IB BASE CURRENT (mA)
Figure 16. Collector Saturation Ragion
TJ=25 C
100mA
2.0
3.0
5.0 7.0 10
1.2
TJ=25 C
1.0
VBE(sat )@IC/I _B=10
0.8
VBE(sat) @VCE=1.0V
0.6
0.4
0.2
0
1.0
VCE(sat)@IC/I _B=10
2.0
5.0
10
20
50
100 200
IC COLLECTOR CURRENT (mA)
Figure 17. "ON" Voltage
1.0
0.5
+25 C to +125 C
θ_VC FOR VCE(sat)
0
-55 C to +25 C
-0.5
-1.0
-1.5
θ_VB FOR VBE(sat)
-55 C to +25 C
+25 C to +125 C
-2.0
0
20 40 60 80 100 120 140 160 180 200
IC COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
http://www.formosams.com/
TEL:[phone]
FAX:[phone]
Page 7
Document ID
DS-231123
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
11