FMBT3904DW1 Datasheet, PDF (2/11 Pages) Formosa MS – Dual NPN Transistor

Dual NPN Transistor
Formosa MS
FMBT3904DW1 & FMBT3904DW2
Dual General Purpose Transistor
NPN+NPN Silicon
Features
• High collector-emitterbreakdien voltage.
(BV_CEO = 40V@I_C=1mA)
• Small load switch transistor with high gain and low
stauration voltage, is designed for general purpose
amflifier and switching applications at collector current.
• Offer NPN+NPN in one package
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT3904DW1-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-363
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : See Diagram
• Mounting Position : Any
• Weight : Approximated 0.006 gram
Package outline
SOT-363
.087(2.20)
.079(2.00)
.053(1.35)
.045(1.15)
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.026(0.65)Typ. .010(0.25)
.003(0.08)
.004(0.10)
Max.
.016(0.40)
.012(0.30)
.043(1.10)
.035(0.90)
Dimensions in inches and (millimeters)
3 21
Q
Q
3 21
Q
Q
4⁵ 6
FMBT3904DW1
Maximum ratings (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
456
FMBT3904DW2
Symbol
V_CBO
V_CEO
V_EBO
I_C
MIN.
TYP.
MAX. UNIT
60
V
40
V
6.0 V
200 ^mA
Total device dissipation
T_A = 25^OC
P_D
150 ^mW
Thermal resistance
Operating temperature
Storage temperature
Junction to ambient
R_θJA
T_J
-55
T_STG
-65
833
+150
+150
O_C/W
o_C
http://www.formosams.com/
TEL:[phone]
FAX:[phone]
Page 2
Document ID
DS-231123
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
11