FMBT3904DW1 Datasheet, PDF (5/11 Pages) Formosa MS – Dual NPN Transistor

Dual NPN Transistor
Formosa MS
Rating and characteristic curves (FMBT3904DW1 & FMBT3904DW2)
TYPICAL TRANSIENT CHARACTERISTIC
TJ=25°C, -------- TJ=125°C
10
7.0
5.0
Cibo
3.0
2.0
Cobo
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
5000
3000
2000
VCC=40V
IC / I _B=10
1000
700
500
300
200
100
70
50
1.0
QT
QA
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC COLLECTOR CURRENT (mA)
Figure 4. Charge Data
500
300
IC / I _B=10
200
100
70
50
30
20
10
7
5
1.0
t _r @VCC=3.0V
40V
t _d @VOB=0V
15V
2.0V
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC COLLECTOR CURRENT
Figure 5.Turn-On Time
500
300
VCC =40V
200
IC / I _B=10
100
70
50
30
20
10
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC COLLECTOR CURRENT (mA)
Figure 6. Rise Time
500
300
200 ^{IC / I B=20}
IC / I _B=10
t
,
s
=t _s-1/8t
f
IB1 =I _B2
100
70
50
IC / I _B=20
30
IC / I _B=10
20
10
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC COLLECTOR CURRENT (mA)
Figure 7. Storage Time
500
300
VCC=40V
200
IB1 =I _B2
IC / I _B=20
100
70
50
30
IC / I _B=10
20
10
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC COLLECTOR CURRENT (mA)
Figure 8. Fall Time
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Page 5
Document ID
DS-231123
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
11