FMBT2222ADW1 Datasheet, PDF (6/10 Pages) Formosa MS – Dual NPN Epitaxial Planar Transistor

Rating and characteristic curves (FMBT2222ADW1)
Fig. 7 Frequency Effects
10
8.0
6.0
I_C = 1.0mA, R_S = 150Ω
500uA, R_S = 200Ω
100uA, R_S = 2.0kΩ
50uA, R_S = 4.0kΩ
R_S = OPTIMUM
SOURCE
RESISTANCE
4.0
2.0
0
0.01
0.1
1
10
100
f, FREQUENCY (kHz)
Fig. 8 Source Resistance Effects
10
f = 1.0kHz
8.0
I_C = 50uA
100uA
6.0
500uA
1.0mA
4.0
2.0
0
50 100
1K
10K
100K
BS, SOURCE RESISTANCE (OHMS)
Fig. 9Capacitances
30
20
Ceb
10
7.0
5.0
3.0
2.0
0.1
Ccb
1.0
10
50
REVERSE VOLTAGE (VOLTS)
Fig. 11 "On" Voltage
2.0
T_J =25^OC
0.8
V @ _BE(sat) I_C/I_B = 10
0.6
0.4
V @V _BE(on)
CE
=
10V
1.0 V
0.2
V @ _CE(sat) I_C/I_B = 10
0
0.1
1.0
10
100
Collector Current, Ic (mA)
1000
Fig. 10 Current-Gain Bandwidth Product
500
300
V_CE = 20V
T_J =25^OC
200
100
70
50
1.0 2.0
10
100
Collector Current, Ic (mA)
0.5
0
-0.5
-1.0
Fig.12 TEMPERATURE COFFICIENTS
R_VC for V_CE(sat)
1.5
-2.0
-2.5
0.1
R_VB for V_BE
1
10
100
500
Collector Current, Ic (mA)
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Page 6
Document ID Issued Date
DS-231148 2009/08/10
Revised Date Revision
2010/05/10
B
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