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FMBT2222ADW1 Datasheet, PDF (3/10 Pages) Formosa MS – Dual NPN Epitaxial Planar Transistor
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Dual NPN Epitaxial Planar Transistor
FMBT2222ADW1
Formosa MS
Characteristics (AT TA=25oC unless otherwise noted)
Off characteristics
PARAMETER
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage(3)
Emitter-Base breakdown voltage
Base cutoff current
Collector cutoff current
Collector cutoff current
Emitter cutoff current
CONDITIONS
Ic = 10uA, IE = 0
Ic = 10mA, IB = 0
IE = 10uA, IC = 0
VCE = 60Vdc, VEB(off) = 3.0Vdc
VCE = 60Vdc, VEB(off) = 3.0Vdc
VCB = 60Vdc, IE = 0
VCB = 60Vdc, IE = 0, TA =125OC
IC = 0, VEB = 3.0Vdc
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IBL
ICEX
ICBO
IEBO
MIN.
75
40
6.0
TYP. MAX. UNIT
V
V
V
20
nA
10
0.01
uA
10
100 nA
On characteristics(3)
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
Ic = 0.1mA, VCE = 10V
Ic = 1.0mA, VCE = 10V
Ic = 10mA, VCE = 10V, TA = -55OC
DC current gain
Ic = 150mA, VCE = 10V(3)
Ic = 150mA, VCE = 1.0V(3)
Ic = 500mA, VCE = 10V(3)
Collector-Emitter saturation voltage(3)
Ic = 150mA, IB = 15mA
Ic = 500mA, IB = 50mA
Base-Emitter saturation voltage(3)
Ic = 150mA, IB = 15mA
Ic = 500mA, IB = 50mA
3.Pulse test : pukse width < 300uS, duty cycle < 2.0%.
35
50
75
hFE
100
50
40
VCE(sat)
VBE(sat)
0.60
300 -
0.3
Vdc
1.0
1.2
Vdc
2.0
Small-signal characteristics
PARAMETER
CONDITIONS
Symbol MIN.
Current-gain-bandwidth product(4) IC = 20mA, VCE = 20V, f = 100MHz
Output capacitance
VCB = 10V, IE = 0, f = 1.0MHz
Input capacitance
VEB = 0.5V, IC = 0, f = 1.0MHz
Input impedance
VCE = 10V, IC = 1.0mA, f = 1.0KHz
fT
Cobo
Cibo
hie
300
2.0
Voltage feeback radio
VCE = 10V, IC = 10mA, f = 1.0KHz
VCE = 10V, IC = 1.0mA, f = 1.0KHz
0.25
hre
Small-signal current gain
VCE = 10V, IC = 10mA, f = -1.0KHz
VCE = 10V, IC = 1.0mA, f = 1.0KHz
hfe
50
VCE = 10V, IC = 10mA, f = -1.0KHz
75
Output admittance
VCE = 10V, IC = 1.0mA, f = 1.0KHz
hoe
5.0
VCE = 10V, IC = 10mA, f = -1.0KHz
25
Noise figure
VCB = 20V, IE = 20mA, f = 31.8MHz
rb, Cc
Noise figure
VCE = 10V, IC = 100uA, RS = 1.0K ohms, f = 1.0KHZ NF
4.fT is defined as the frequency at which hfe extrapolates to unity.
Switching characteristics
TYP. MAX. UNIT
MHz
8.0 VpFdc
25 pF
0.8 Vdc
kohms
1.25
8.0
X 10-4
4.0
300
-
375
35
umhos
200
150 ps
4.0 dB
PARAMETER
Delay time
Rise time
Storage time
Fall time
CONDITIONS
Symbol
td
VCC = 30V, VBE =(off) = -0.5V, IC = 150mA, IB1 = 15mA
tr
ts
VCC = 30V, IC =150mA, IB1 = IB2 = 15mA
tf
MIN.
TYP.
MAX. UNIT
10
25
nS
225
60
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Page 3
Document ID Issued Date
DS-231148 2009/08/10
Revised Date Revision
2010/05/10
B
Page.
10
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