FMBT2222ADW1 Datasheet, PDF (2/10 Pages) Formosa MS – Dual NPN Epitaxial Planar Transistor

Dual NPN Epitaxial Planar Transistor
FMBT2222ADW1
Formosa MS
600mA Silicon NPN Epitaxial Planar
Transistor
Package outline
SOT-363
Features
• High collector-emitterbreakdien voltage.
(BV_CEO = 40V@I_C=10mA)
• Small load switch transistor with high gain and low
stauration voltage, is designed for general purpose
amflifier and switching applications at collector current.
• Offer NPN+NPN in one package
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT2222ADW1-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-363
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : See Diagram
• Mounting Position : Any
• Weight : Approximated 0.006 gram
.053(1.35)
.045(1.15)
.087(2.20)
.079(2.00)
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.026(0.65)Typ. .010(0.25)
.003(0.08)
.004(0.10)
Max.
.016(0.40)
.012(0.30)
.043(1.10)
.035(0.90)
Dimensions in inches and (millimeters)
3 21
4⁵ 6
Maximum ratings (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Total device dissipation(1)
T_A = 25^OC
Thermal resistance
Operating temperature
Storage temperature
Junction to ambient
1.Device mounted on FR-4 glass epoxy printed circuit board using
the minimum recommended footprint
Symbol
V_CBO
V_CEO
V_EBO
I_C
MIN.
TYP.
MAX. UNIT
75
V
40
V
6.0 V
600 ^mA
P_D
150 ^mW
R_θJA
T_J
T_STG
-55
-55
833
+150
+150
O_C/W
o_C
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Page 2
Document ID Issued Date
DS-231148 2009/08/10
Revised Date Revision
2010/05/10
B
Page.
10