FMBTA05 Datasheet, PDF (5/9 Pages) Formosa MS – Drive NPN Transistor

Drive NPN Transistor
FMBTA05 / FMBTA06
Formosa MS
80
60
T_J = 25 C
40
C_ibo
20
10
8.0
6.0
4.0
0.1 0.2
C_obo
0.5 1.0 2.0 5.0 10 20 50 100
V_R, REVERSE VOLTAGE (VOLTS)
FIG3. Capacitance
1.0 k
700
500
t_s
300
200
100
70
50
V_CC = 40 V
30 _{IC/IB = 10}
20 I_B1 = I_B2
T_J = 25 C
10
5.0 7.0 10
t_d @ V_BE(off)= 0.5 V
20 30 50 70 100
t_f
t_r
200 300 500
I_C, COLLECTOR CURRENT (mA)
FIG4. Switching Time
400
T_J = 125 C
200
25 C
-55 C
100
80
60
V_CE = 1.0 V
40
0.5 1.0 2.03.0 5.0 10 20 30 50 100 200 300 500
I_C, COLLECTOR CURRENT (mA)
FIG5. DC Current Gain
1.0
T_J = 25 C
0.8
V_BE(sat)@ I_C/I_B= 10
0.6
V_BE(on)@ V_CE = 1.0 V
0.4
0.2
V_CE(sat)@ I_C/I_B= 10
0
0.5 1.0 2.0 5.0 10 20 50 100 200 500
I_C, COLLECTOR CURRENT (mA)
FIG6. "ON ^" Voltages
1.0
0.8
I_C =
50 mA
0.6
T_J = 25 C
I_C =
100 mA
I_C =
I_C =
250 mA 500 mA
0.4
I_C =
0.2 ^{10 mA}
0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
I_B, BASE CURRENT (mA)
FIG7. Collector Saturation Region
-0.8
-1.2
-1.6
-2.0
θ_VB for V_BE
-2.4
-2.8
0.5 1.0 2.0 5.0 10 20
50 100 200 500
I_C, COLLECTOR CURRENT (mA)
FIG8. Base-Emitter Temperature
Coefficient
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Document ID Issued Date
DS-231111 2008/02/10
Revised Date Revision
2011/07/21
C
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