FMBTA05 Datasheet, PDF(3/9 Page) Formosa MS

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FMBTA05 Datasheet, PDF (3/9 Pages) Formosa MS – Drive NPN Transistor

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Drive NPN Transistor

FMBTA05 / FMBTA06

Formosa MS

Characteristics (AT TA=25oC unless otherwise noted)

Off Characteristics

PARAMETER

Collector-Base breakdown voltage

CONDITIONS

Ic = 100ÂµAdc, IE = 0

Ic = 1.0mAdc, IB = 0

Collector-Emitter breakdown voltage(3)

Emitter-Base breakdown voltage

Collector Cutoff Current

Collector cutoff current

IE = 100ÂµAdc, IC = 0

VCE=60Vdc, IB=0

VCB = 60Vdc, IE = 0

VCB = 80Vdc, IE = 0

On Characteristics

PARAMETER

DCcurrent gain

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

Small Signal Characteristics

PARAMETER

Current Gain Bandwidth Product (4)

CONDITIONS

Ic = 10mAdc, VCE = 1.0Vdc

Ic = 100mAdc, VCE = 1.0Vdc

Ic = 100mAdc, IB = 10mAdc

Ic = 100mAdc, VCE = 1.0Vdc

CONDITIONS

Ic = 10mA, VCE = 2.0V,

f=100MHz

Symbol Types

V(BR)CBO

FMBTA05

FMBTA06

V(BR)CEO

V(BR)EBO

ICES

FMBTA05

FMBTA06

FMBTA05

ICBO

FMBTA06

Min.

4.0

Max.

0.1

UNIT

Vdc

ÂµAdc

Symbol

hFE

VCE(sat)

VBE(on)

Symbol

Min.

100

Min.

100

Max.

0.25

1.2

UNIT

Vdc

Max.

UNIT

MHz

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Page 3

Document ID Issued Date

DS-231111 2008/02/10

Revised Date Revision

2011/07/21

Page.

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