FMBT4403 Datasheet, PDF (4/10 Pages) Formosa MS – 600mA Silicon PNP Epitaxial Planar Transistor

PNP Epitaxial Planar Transistor
FMBT4403
Formosa MS
Switching time equivalent test circuits
+2 V
0
-16 V
< 2 ns
1.0 kΩ
10 to 100 us,
DUTY CYCLE = 2%
-30 V
200 Ω
< 20 ns
+14 V
CS* < 10 pF
0
-16 V
1.0 kΩ
1.0 to 100us,
Scope rise time < 4.0 ns
DUTY CYCLE=2% _+4.0V
*Total shunt capacitance of test jig connectors, and oscilloscope
-30 V
200 Ω
CS* < 10 pF
Figure 1. Turn-On T ime
Figure 2. Turn-Off T ime
TRANSIENTCHARACTERISTICS
25 C
125 C
30
10
7.0
20
5.0
Ceb
3.0
VCC = 30 V
IC/IB = 10
2.0
10
1.0
7.0
0.7
5.0
Ccb
0.5
QT
0.3
QA
0.2
2.0
0.1
0.2 0.3 0.50.7 1.0 2.0 3.0 5.07.0 10
REVERSE VOLTAGE (VOLTS )
Figure 3. Capacitances
20 30
0.1
10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
100
100
70
IC/IB= 10
70
50
50
tr @ VCC = 30 V
30
tr @ VCC = 10 V
30
td @ VBE_(off)= 2 V
20
td @ VBE_(off)= 0
20
VCC = 30 V
IC/IB = 10
10
7.0
5.0
10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn-On Time
10
7.0
5.0
10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 6. Rise Time
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Document ID Issued Date
DS-231118
2008/02/10
Revised Date Revision
2010/03/10
B
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