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FMBT4403 Datasheet, PDF (3/10 Pages) Formosa MS – 600mA Silicon PNP Epitaxial Planar Transistor
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PNP Epitaxial Planar Transistor
FMBT4403
Formosa MS
Characteristics (AT TA=25oC unless otherwise noted)
Off characteristics
PARAMETER
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage(3)
Emitter-Base breakdown voltage
Base cutoff current
Collector cutoff current
CONDITIONS
Ic = -0.1mA, IE = 0
Ic = -1.0mA, IB = 0
IE = -0.1mA, IC = 0
VCE = -35Vdc, VEB = -0.4 Vdc
VCE = -35Vdc, VEB = -0.4Vdc
On characteristics(3)
PARAMETER
CONDITIONS
Ic = -0.1mA, VCE = -1.0V
Ic = -1.0mA, VCE = -1.0V
DC current gain
Ic = -10mA, VCE = -1.0V
Ic = -150mA, VCE = -1.0V
Ic = -500mA, VCE = -2.0V
Collector-Emitter saturation voltage(3)
Ic = 150mA, IB = 15mA
Ic = 500mA, IB = 50mA
Base-Emitter saturation voltage(3)
Ic = 150mA, IB = 15mA
Ic = 500mA, IB = 50mA
3.Pulse test : pukse width < 300uS, duty cycle < 2.0%.
Small-signal characteristics
PARAMETER
CONDITIONS
Current-gain-bandwidth product(4) IC = -20mA, VCE = -10V, f = 100MHz
Output capacitance
VCB = -10V, IE = 0, f = 1.0MHz
Input capacitance
VEB = -0.5V, IC = 0, f = 1.0MHz
Input impedance
VCE = -10V, IC = -1.0mA, f = 1.0KHz
Voltage feeback radio
VCE = -10V, IC = 1.0mA, f = 1.0KHz
Small-signal current gain
VCE = -10V, IC = -1.0mA, f = 1.0KHz
Output admittance
VCE = -10V, IC = -1.0mA, f = 1.0KHz
4.fT is defined as the frequency at which hfe extrapolates to unity.
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IBL
ICEX
MIN.
-40
-40
-5.0
TYP. MAX. UNIT
V
V
V
-0.1
µA
-0.1
Symbol MIN. TYP. MAX. UNIT
30
60
hFE
100
300 -
100
20
VCE(sat)
-0.4
Vdc
-0.75
VBE(sat)
0.75
-0.95
Vdc
-1.30
Symbol MIN. TYP. MAX. UNIT
fT
Cobo
Cibo
hie
hre
hfe
200
1.5
0.1
60
MHz
8.5 VpFdc
30 pF
15 kohms
8.0
X 10-4
500
-
hoe
1.0
100 µmhos
Switching characteristics
PARAMETER
Delay time
Rise time
Storage time
Fall time
CONDITIONS
VCC = -30V, VBE = -2.0Vdc, IC = -150mA, IB1 = -15mA
VCC = -30V, IC =-150mA, IB1 = IB2 = -15mA
Symbol MIN. TYP. MAX. UNIT
td
15
tr
20
ns
ts
225
tf
30
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Page 3
Document ID Issued Date
DS-231118
2008/02/10
Revised Date Revision
2010/03/10
B
Page.
10
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