FMBT4403 Datasheet, PDF (2/10 Pages) Formosa MS – 600mA Silicon PNP Epitaxial Planar Transistor

PNP Epitaxial Planar Transistor
FMBT4403
600mA Silicon PNP Epitaxial Planar
Transistor
Features
• Epitaxial plana chip construction
• Ideal for medium power application and switching
• Capable of 225mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" dinicates Halogen-free part, ex.FMBT4403-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Formosa MS
Package outline
SOT-23
(B)
(C)
(A)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
0.051 (1.30)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum ratings (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Total device dissipation FR-5 board ^{TA = 25OC}
(1)
Derate above 25^OC
Thermal resistance
Total device dissipation alumina
substrate(2)
Junction to ambient
T_A = 25^OC
Derate above 25^OC
Thermal resistance
Operating temperature
Junction to ambient
Storage temperature
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
P_D
R_θJA
P_D
P_D
R_θJA
T_J
T_STG
MIN.
-55
-65
TYP. MAX. UNIT
-40 V
-40 V
-5.0 V
-600 ^mA
225 ^mW
1.8 ^mW/OC
556 ^OC/W
300 ^mW
2.4 ^mW/OC
417
+150
+150
O_C/W
o_C
http://www.formosams.com/
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Page 2
Document ID Issued Date
DS-231118
2008/02/10
Revised Date Revision
2010/03/10
B
Page.
10