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FMBT3946DW Datasheet, PDF (3/14 Pages) Formosa MS – Dual NPN +PNP SMD Transistor
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Dual NPN +PNP SMD Transistor
FMBT3946DW
Electrical characteristics (AT TA=25oC unless otherwise noted)
Off characteristics
PARAMETER
CONDITIONS (NPN)
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage(3)
Emitter-Base breakdown voltage
Base cutoff current
Collector cutoff current
PARAMETER
Ic = 10μA, IE = 0
Ic = 1mA, IB = 0
Ic = 10μA, IC = 0
VCE = 30Vdc, VEB = 3.0Vdc
VCE = 30Vdc, VEB = 3.0Vdc
CONDITIONS (PNP)
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage(3)
Emitter-Base breakdown voltage
Base cutoff current
Collector cutoff current
Ic = -10μA, IE = 0
Ic = -1mA, IB = 0
Ic = -10μA, IC = 0
VCE = -30Vdc, VEB = -3.0Vdc
VCE = -30Vdc, VEB = -3.0Vdc
On characteristics(2)
PARAMETER
CONDITIONS (NPN)
DC current gain
Collector-Emitter saturation voltage(2)
Base-Emitter saturation voltage(2)
PARAMETER
Ic = 0.1mA, VCE = 1.0V
Ic = 1.0mA, VCE = 1.0V
Ic = 10mA, VCE = 1.0V
Ic = 50mA, VCE = 1.0V
Ic = 100mA, VCE = 1.0V
Ic = 10mA, IB = 1.0mA
Ic = 50mA, IB = 5.0mA
Ic = 10mA, IB = 1.0mA
Ic = 50mA, IB = 5.0mA
CONDITIONS (PNP)
Ic = -0.1mA, VCE = -1.0V
Ic = -1.0mA, VCE = -1.0V
DC current gain
Ic = -10mA, VCE = -1.0V
Ic = -50mA, VCE = -1.0V
Ic = -100mA, VCE = -1.0V
Collector-Emitter saturation voltage(2)
Ic = -10mA, IB = -1.0mA
Ic = -50mA, IB = -5.0mA
Base-Emitter saturation voltage(2)
Ic = -10mA, IB = -1.0mA
Ic = -50mA, IB = -5.0mA
2.Pulse test : pukse width < 300uS, duty cycle < 2.0%.
Formosa MS
Symbol MIN.
V(BR)CBO
V(BR)CEO
V(BR)EBO
IBL
ICEX
Symbol
60
40
6.0
MIN.
V(BR)CBO
V(BR)CEO
V(BR)EBO
IBL
ICEX
-40
-40
-5.0
TYP.
TYP.
MAX. UNIT
V
V
V
50
nA
50
MAX. UNIT
V
V
V
-50
nA
-50
Symbol MIN. TYP. MAX. UNIT
40
70
hFE
100
300 -
60
30
VCE(sat)
0.2
Vdc
0.3
VBE(sat)
0.65
0.85
Vdc
0.95
Symbol MIN. TYP. MAX. UNIT
60
80
hFE
100
300
-
60
30
VCE(sat)
-0.25
Vdc
-0.40
VBE(sat)
-0.65
-0.85
Vdc
-0.95
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Page 3
Document ID
DS-231156
Issued Date
2010/01/10
Revised Date
2010/06/10
Revision
B
Page.
14
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