FMBT3946DW Datasheet, PDF (2/14 Pages) Formosa MS – Dual NPN +PNP SMD Transistor

Dual NPN +PNP SMD Transistor
FMBT3946DW
Formosa MS
200mA Silicon NPN+PNP Epitaxial
Planar Transistor
Features
• High collector-emitterbreakdien voltage.
(BV_CEO ±40V Min.@I_C=±1mA)
• Small load switch transistor with high gain and low
stauration voltage, is designed for general purpose
amflifier and switching applications at collector current.
• Offer NPN+PNP in one package
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen free part, ex. FMBT3946DW-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-363
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : See Diagram
• Mounting Position : Any
• Weight : Approximated 0.006 gram
Package outline
SOT-363
.087(2.20)
.070(1.80)
.053(1.35)
.045(1.15)
.012(0.30)
.004(0.10)
.004(0.10)
Max.
.026(0.65)Typ. .010(0.25)
.003(0.08)
.043(1.10)
.031(0.80)
Dimensions in inches and (millimeters)
3 21
Q1
Q2
4⁵ 6
Maximum ratings (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
NPN
PNP
NPN
PNP
NPN
PNP
NPN
PNP
Symbol
V_CBO
V_CEO
V_EBO
I_C
MIN.
TYP. MAX. UNIT
60
-40
V
40
-40
V
6.0
V
-5.0
200
-200
mA
Total device dissipation (1)
T_A = 25^OC
P_D
150 ^mW
Thermal resistance
Junction to ambient
R_θJA
Operating junction temperature range
T_J
-55
Storage temperature range
T_STG
-55
1.Device mounted on FR-4 glass epoxy printed circuit board using the minimum recommended footprint
833 ^O_C/W
+150 ^oC
+150 ^o_C
http://www.formosams.com/
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FAX:[phone]
Page 2
Document ID
DS-231156
Issued Date
2010/01/10
Revised Date
2010/06/10
Revision
B
Page.
14