EFD25 Datasheet, PDF (3/7 Pages) NXP Semiconductors – EFD cores and accessories

Ferroxcube
EFD cores and accessories
EFD25/13/9
GRADE
3F3
3F35
3F4
3F45
A_L
(nH)
160 ±3%
250 ±3%
315 ±5%
400 ±8%
630 ±10%
2000 ±25%
1500 ±25%
160 ±3%
250 ±3%
315 ±5%
400 ±8%
630 ±10%
1000 ±25%
1000 ±25%
µ_e
≈ 125
≈ 196
≈ 246
≈ 313
≈ 493
≈ 1560
≈ 1170
≈ 125
≈ 196
≈ 246
≈ 313
≈ 493
≈ 780
≈ 780
AIR GAP
(µm)
≈ 570
≈ 320
≈ 240
≈ 180
≈ 100
≈0
≈0
≈ 500
≈ 270
≈ 290
≈ 130
≈ 60
≈0
≈0
TYPE NUMBER
EFD25/13/9-3F3-A160
EFD25/13/9-3F3-A250
EFD25/13/9-3F3-A315
EFD25/13/9-3F3-A400
EFD25/13/9-3F3-A630
EFD25/13/9-3F3
EFD25/13/9-3F35
EFD25/13/9-3F4-A160
EFD25/13/9-3F4-A250
EFD25/13/9-3F4-A315
EFD25/13/9-3F4-A400
EFD25/13/9-3F4-A630
EFD25/13/9-3F4
EFD25/13/9-3F45
Properties of core sets under power conditions
B (mT) at
CORE LOSS (W) at
GRADE
3C90
3C94
3C95
3C96
3F35
3F3
3F4
H = 250 A/m;
f = 25 kHz;
T = 100 °C
≥330
≥330
≥330
≥330
≥300
≥315
≥300
f = 25 kHz;
B^ˆ = 200 mT;
T = 100 °C
≤ 0.35
−
−
−
−
−
−
f = 100 kHz;
B^{ˆ = 100 mT;}
T = 100 °C
≤ 0.38
≤ 0.30
−
≤ 0.22
−
≤ 0.38
−
f = 100 kHz;
B^ˆ = 200 mT;
T = 25 °C
−
−
≤ 1.95
−
−
−
−
f = 100 kHz;
B^ˆ = 200 mT;
T = 100 °C
−
≤ 1.8
≤ 1.85
≤ 1.4
−
−
−
f = 400 kHz;
B^{ˆ = 50 mT;}
T = 100 °C
−
−
−
≤ 0.6
≤ 0.28
≤ 0.66
−
Properties of core sets under power conditions (continued)
B (mT) at
CORE LOSS (W) at
GRADE
3C90
3C94
3C95
3C96
3F35
3F3
3F4
3F45
H = 250 A/m;
f = 25 kHz;
T = 100 °C
≥330
≥330
≥330
≥330
≥300
≥315
≥300
≥300
f = 500 kHz;
B^ˆ = 50 mT;
T = 100 °C
−
−
−
≤ 1.2
≤ 0.42
−
−
−
f = 500 kHz;
B^ˆ = 100 mT;
T = 100 °C
−
−
−
−
≤ 3.4
−
−
−
f = 1 MHz;
B^{ˆ = 30 mT;}
T = 100 °C
−
−
−
−
−
−
≤ 1.0
≤ 0.75
f = 1 MHz;
B^{ˆ = 50 mT;}
T = 100 °C
−
−
−
−
−
−
−
≤ 2.8
f = 3 MHz;
B^{ˆ = 10 mT;}
T = 100 °C
−
−
−
−
−
−
≤ 1.6
≤ 1.25
2008 Sep 01
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