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MRF6S9060NR1 Datasheet, PDF (8/16 Pages) Fairchild Semiconductor – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
TYPICAL CHARACTERISTICS
22
21.5 TC = −30_C
Gps
21
25_C
20.5
85_C
20
80
−30_C
70
25_C
60
85_C
50
40
19.5
30
19
ηD
18.5
18
1
VDD = 28 Vdc
IDQ = 450 mA
f = 880 MHz
10
20
10
0
100
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
22
21
20
19
18
32 V
28 V
17
24 V
16
15
20 V
14
16 V
13
12
11
VDD = 12 V
IDQ = 450 mA
f = 880 MHz
10
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
109
108
107
106
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9060NR1 MRF6S9060NBR1
8
RF Device Data
Freescale Semiconductor