MRF6S9060NR1 Datasheet, PDF (10/16 Pages) Fairchild Semiconductor – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 5 Ω
Z_source
f = 910 MHz
f = 850 MHz
f = 910 MHz
Z_load
f = 850 MHz
V_DD = 28 Vdc, I_DQ = 450 mA, P_out = 14 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
850
0.44 - j0.20
2.28 + j0.23
865
0.44 - j0.07
2.18 + j0.33
880
0.45 + j0.50
2.20 + j0.47
895
0.48 + j0.18
2.15 + j0.61
910
0.52 + j0.29
2.00 + j0.68
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 16. Series Equivalent Source and Load Impedance
MRF6S9060NR1 MRF6S9060NBR1
10
RF Device Data
Freescale Semiconductor