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MRF6S9060NR1 Datasheet, PDF (3/16 Pages) Fairchild Semiconductor – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 οhm system)
VDD = 28 Vdc, IDQ = 500 mA, Pout = 21 W Avg., f = 921 - 960 MHz, GSM EDGE Signal
Power Gain
Gps
â
20
â
dB
Drain Efficiency
ηD
â
46
â
%
Error Vector Magnitude
EVM
â
1.5
â
%
Spectral Regrowth at 400 kHz Offset
SR1
â
- 62
â
dBc
Spectral Regrowth at 600 kHz Offset
SR2
â
- 78
â
dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 28 Vdc,
IDQ = 500 mA, Pout = 60 W, f = 921 - 960 MHz
Power Gain
Gps
â
20
â
dB
Drain Efficiency
ηD
â
63
â
%
Input Return Loss
IRL
â
- 12
â
dB
Pout @ 1 dB Compression Point
(f = 940 MHz)
P1dB
â
67
â
W
RF Device Data
Freescale Semiconductor
MRF6S9060NR1 MRF6S9060NBR1
3
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