FAN5056MV85 Datasheet, PDF (8/15 Pages) Fairchild Semiconductor – High Performance Programmable Synchronous DC-DC Controller for Multi-Voltage Platforms

FAN5056MV85
PRODUCT SPECIFICATION
Table 3. FAN5056 Application Bill of Materials for Intel VRM8.5 Motherboards
(Components based on Worst Case Analysis—See Appendix for Details)
Reference Manufacturer Part #
Quantity Description
Requirements/Comments
C1
AVX
TAJB475M010R5
1
4.7µF, 10V Capacitor
C2, C5
Panasonic
ECU-V1C105ZFX
2
1µF, 16V Capacitor
C3-4,C6 Panasonic
ECU-V1H104ZFX
3
100nF, 50V Capacitor
C7-9
Sanyo
6MV1000FA
3
1000µF, 6.3V
Electrolytic
C_IN
Rubycon
16ZL1000M
4
1000µF, 16V
Electrolytic
I_RMS = 2.3A
C_OUT
Rubycon
6.3ZL1500M
8
1500µF, 6.3V
Electrolytic
ESR ≤ 23mΩ
D1
Motorola
MBRD835L
1
8A Schottky Diode
L1
Any
Optional 1.3µH, 10A Inductor
DCR ~ 6mΩ
See Note 1.
L2
Coiltronics
HC2-1R0
1
1.0µH, 34A Inductor
DCR ~ 1mΩ
Q1
Fairchild
FDD6690A
2
N-Channel MOSFET
R_DS(ON) = 17mΩ @ V_GS = 4.5V
See Note 2.
Q2
Fairchild
FDD6680A
2
N-Channel MOSFET
R_DS(ON) = 13mΩ @ V_GS = 4.5V
See Note 2.
Q3-5
Fairchild
NDB4032L
3
N-Channel MOSFET
R1, R6 Any
2
10Ω
R2-3 Any
2
4.7Ω
R4
Any
1
10KΩ
R5
Any
1
27.4KΩ
R7
Any
1
8.66KΩ
U1
Fairchild
FAN5056MV85M
1
DC/DC Controller
Notes:
1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching, and to comply with
Intel dI/dt requirements. L1 may be omitted if desired.
2. For 30A designs using the TO-220 MOSFETs, heatsinks with thermal resistance Θ_SA < 20°C/W should be used. For designs
using the TO-263 MOSFETs, adequate copper area should be used. For details and a spreadsheet on MOSFET selections,
refer to Applications Bulletins AB-8 and AB-15.
Test Parameters
t_R
10%
90%
2V
t_DT
t_F
90%
2V ^10%
t_DT
HIDRV
2V
2V
LODRV
Figure 2. Output Drive Timing Diagram
8
REV. 1.0.6 6/26/01