RFD8P06E_02 Datasheet, PDF (7/8 Pages) Fairchild Semiconductor – 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

RFD8P06E, RFD8P06ESM, RFP8P06E
PSPICE Electrical Model
.SUBCKT RFP8P06E 2 1 3
REV 6/23/94
CA 12 8 7.24e-10
CB 15 14 8.04e-10
CIN 6 8 6.00e-10
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -79.2
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 6 8 1
EVTO 20 6 8 18 1
IT 8 17 1
LDRAIN 2 5 1e-10
LGATE 1 9 2.92e-9
LSOURCE 3 7 2.92e-9
10
DPLCAP
RSCL2
5
RSCL1
5
51
ESCL
-
ESG
+
6
8
GATE
RGATE
9
EVTO
-
18
1 LGATE
20 8
DESD1
RIN
91
DESD2
16
VTO
-
6
CIN
EBREAK
RDRAIN
17
18
+
-
21
MOS1
8
MOS2
11
DBREAK
RSOURCE
7
LDRAIN
2
DRAIN
DBODY
LSOURCE ₃
SOURCE
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 95.2e-3
RGATE 9 20 3.95
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 143.6e-3
RVTO 18 19 RVTOMOD 1
S1A
12 ₁₃
8
S2A
14
15
13
S1B
S2B
13
CA
CB
+
EGS
-
6
8
+ ¹⁴
EDS
-
5
8
RBREAK
17
18
RVTO
IT
19
-
VBAT
+
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.804
ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/22,9))}
.MODEL DBDMOD D (IS=4.15e-15 RS=5.54e-2 TRS1=-1.32e-3 TRS2=-2.48e-6 CJO=6.06e-10 TT=7.50e-8)
.MODEL DBKMOD D (RS=4.66e-1 TRS1=1.58e-3 TRS2=-7.49e-6)
.MODEL DESD1MOD D (BV=20.2 TBV1=-1.25e-3 TBV2=5.79e-7 RS=36 NBV=50 IBV=7e-6)
.MODEL DESD2MOD D (BV=25.4 TBV1=-8.3e-4 TBV2=8.9e-7 NBV=50 IBV=7e-6)
.MODEL DPLCAPMOD D (CJO=2.49e-10 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.824 KP=5.163 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=9.48e-4 TC2=-1.42e-7)
.MODEL RDSMOD RES (TC1=5.40e-3 TC2=1.25e-5)
.MODEL RSCLMOD RES (TC1=1.75e-3 TC2=3.90e-6)
.MODEL RVTOMOD RES (TC1=-3.55e-3 TC2=-3.43e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=5.10 VOFF=3.10)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.10 VOFF=5.10)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.1 VOFF=-2.9)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.9 VOFF=2.1)
.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options;
written by William J. Hepp and C. Frank Wheatley.
©2002 Fairchild Semiconductor Corporation
RFD8P06E, RFD8P06ESM, RFP8P06E Rev.B