RFD8P06E_02 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

RFD8P06E, RFD8P06ESM, RFP8P06E
Data Sheet
January 2002
8A, 60V, 0.300 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. These transistors can be operated directly from
integrated circuits.
The RFD8P06E, RFD8P06ESM and RFP8P06E incorporate
ESD protection and are designed to withstand 2kV (Human
Body Model) of ESD.
Formerly developmental type TA49044.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP8P06E
TO-220AB
RFP8P06E
RFD8P06ESM
TO-252AA
D8P06E
RFD8P06E
TO-251AA
D8P06E
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.
RFD8P06ESM9A.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
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GATE
Features
• 8A, 60V
• r_DS(ON) = 0.300Ω
• Temperature Compensating PSPICE^® Model
• 2kV ESD Protected
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175^oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
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GATE
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
RFD8P06E, RFD8P06ESM, RFP8P06E Rev. B