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| RFD8P06E_02 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs | |||
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RFD8P06E, RFD8P06ESM, RFP8P06E
Typical Performance Curves Unless Otherwise Speciï¬ed
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-10
-8
-6
-4
-2
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
10-5
PDM
SINGLE PULSE
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100
101
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
-100 TC = 25oC, TJ = MAX RATED
100µs
-10
1ms
-1
-0.1
-1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
-10
VDS, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
DC
-100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
©2002 Fairchild Semiconductor Corporation
-102
VGS = -20V
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I

= I25ï£ï£¬
1---7---5-1---5-â--0--T----C--
VGS = -10V
TC = 25oC
-10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-5
10-6 10-5 10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
FIGURE 5. PEAK CURRENT CAPABILITY
RFD8P06E, RFD8P06ESM, RFP8P06E Rev.B
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