FNB43060T2 Datasheet, PDF (7/15 Pages) Fairchild Semiconductor – Motion SPMR 45 Series

Inductive Load, V = 300V, V =15V, T =25℃
PN
DD
J
2000
IGBT Turn-on, Eon
1800
IGBT Turn-off, Eoff
1600
FRD Turn-off, Erec
1400
1200
1000
800
600
400
200
0
0
5
10
15
20
25
30
COLLECTOR CURRENT, I [AMPERES]
C
Inductive Load, V = 300V, V =15V, T =150℃
PN
DD
J
2000
IGBT Turn-on, Eon
1800
IGBT Turn-off, Eoff
1600
FRD Turn-off, Erec
1400
1200
1000
800
600
400
200
0
0
5
10
15
20
25
30
COLLECTOR CURRENT, I [AMPERES]
C
Figure 5. Switching Loss Characteristics (Typical)
Control Part
Symbol Parameter
Conditions
Min.
I_QDDH Quiescent V_DD Supply V_DD(H) = 15 V, IN_(UH,VH,WH) = 0 V V_DD(H) - COM
-
I_QDDL ^Current
V_DD(L) = 15 V, IN_{(UL,VL, WL)} = 0 V V_DD(L) - COM
-
I_PDDH Operating V_DD Supply V_DD(H) = 15 V, f_PWM = 20 kHz, duty V_DD(H) - COM
-
Current
= 50%, Applied to One PWM Sig-
nal Input for High-Side
I_PDDL
V_DD(L) = 15 V, f_PWM = 20 kHz, duty V_DD(L) - COM
-
= 50%, Applied to One PWM Sig-
nal Input for Low-Side
I_QBS Quiescent V_BS Supply V_BS = 15 V, IN_{(UH, VH, WH)} = 0 V V_B(U) - V_S(U), V_B(V) -
-
Current
V_S(V), V_B(W) - V_S(W)
I_PBS
Operating V_BS Supply V_DD = V_BS = 15 V, f_PWM = 20 kHz, V_B(U) - V_S(U), V_B(V) -
-
Current
Duty = 50%, Applied to One PWM V_S(V), V_B(W) - V_S(W)
Signal Input for High-Side
V_FOH
V_FOL
V_SC(ref)
UV_DDD
UV_DDR
UV_BSD
UV_BSR
t_FOD
V_IN(ON)
V_IN(OFF)
R_TH
Fault Output Voltage
Short Circuit Trip Level
Supply Circuit
Under-Voltage
Protection
V_SC = 0 V, V_FO Circuit: 4.7 k to 5 V Pull-up
V_SC = 1 V, V_FO Circuit: 4.7 k to 5 V Pull-up
V_DD = 15 V (Note 7)
C_SC - COM
Detection level
Reset level
Detection level
Reset level
Fault-Out Pulse Width
ON Threshold Voltage Applied between IN_{(UH, VH, WH)} - COM,
OFF Threshold Voltage ^{IN(UL, VL, WL) - COM}
Resistance of
Thermistor
@T_TH = 25°C, (Note 8)
@T_TH = 100°C
4.5
-
0.45
10.5
11.0
10.0
10.5
30
-
0.8
-
-
Note:
7. Short-circuit current protection is functioning only at the low-sides.
8. T_TH is the temperature of thermistor itselt. To know case temperature (T_C), please make the experiment considering your application.
Typ.
-
-
-
-
-
-
-
-
0.50
-
-
-
-
-
-
-
47
2.9
Max.
0.10
2.65
0.15
4.00
0.30
2.00
-
0.5
0.55
13.0
13.5
12.5
13.0
-
2.6
-
-
-
Unit
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
s
V
V
k
k
©2016 Fairchild Semiconductor Corporation
7
FNB43060T2 Rev.1.1
www.fairchildsemi.com