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FNB43060T2 Datasheet, PDF (5/15 Pages) Fairchild Semiconductor – Motion SPMR 45 Series
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Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
VPN
VPN(Surge)
VCES
± IC
± ICP
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Applied between P - NU, NV, NW
Applied between P - NU, NV, NW
TC = 25°C, TJ ＜ 150°C
TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse
Width (Note 4)
PC
Collector Dissipation
TJ
Operating Junction Temperature
TC = 25°C per One Chip (Note 4)
Rating
450
500
600
30
60
59
- 40 ~ 150
Unit
V
V
V
A
A
W
°C
Control Part
Symbol
Parameter
VDD
Control Supply Voltage
VBS
High - Side Control Bias Voltage
VIN
Input Signal Voltage
VFO
Fault Output Supply Voltage
IFO
Fault Output Current
VSC
Current-Sensing Input Voltage
Conditions
Rating
Applied between VDD(H), VDD(L) - COM
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
Applied between VFO - COM
Sink Current at VFO pin
Applied between CSC - COM
20
20
-0.3 ~ VDD + 0.3
-0.3 ~ VDD + 0.3
1
-0.3 ~ VDD+ 0.3
Unit
V
V
V
V
mA
V
Bootstrap Diode Part
Symbol
Parameter
VRRM
IF
IFP
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
TJ
Operating Junction Temperature
Conditions
TC = 25°C, TJ ＜ 150°C
TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse
Width (Note 4)
Rating
600
0.5
2.0
-40 ~ 150
Unit
V
A
A
°C
Total System
Symbol
Parameter
VPN(PROT) Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
TC
TSTG
VISO
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
VDD = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 s
See Figure 2
60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate
Rating
400
-40 ~ 125
-40 ~ 125
2000
Unit
V
°C
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Rth(j-c)Q
Rth(j-c)F
Junction to Case Thermal Resistance Inverter IGBT Part (per 1 / 6 module)
(Note 5)
Inverter FWDi Part (per 1 / 6 module)
Note:
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (TC), please refer to Figure 2.
Min.
-
-
Typ.
-
-
Max.
2.1
2.8
Unit
°C / W
°C / W
©2016 Fairchild Semiconductor Corporation
5
FNB43060T2 Rev.1.1
www.fairchildsemi.com
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