FMS6G20US60 Datasheet, PDF (7/10 Pages) Fairchild Semiconductor – Compact & Complex Module

Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics
10000
Common Emitter
V_GE = ± 15V, R_G = 10Ω
T_C = 25℃ ℃℃
T_C = 125℃ ------
1000
E o ff
E o ff
Eon
15
Common Emitter
12
R_L = 15 Ω
T_C = 25 ^oC
9
6
V = 100 V
CC
300 V
200 V
3
100
10
15
20
25
30
35
40
C o ll e c t o r C u rr e n t, I [ A ]
C
0
0
10
20
30
40
50
60
G ate C h arg e, Q [n C ]
g
Figure 15. SOA Characteristics
100
I_C MAX. (Pulsed)
10 ^IC ^{MAX. (Continuous)}
50us
100us
1 ms
DC Operation
1
Single Nonrepetitive
0.1 Pulse T_C = 25℃
Curves must be derated
linearly with increase
in temperature
0.01
0.3
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 16. RBSOA Characteristics
80
10
1
Single Nonrepetitive
Pulse T_J ≤ 125℃
V_GE = 15V
0.1 ^{RG = 10 Ω}
0
100 200 300 400 500 600 700
Collector-Emitter Voltage, V_CE [V]
Figure 17. Forward Characteristics
40
Common Cathode
35
V_GE = 0V
T_C = 25℃
30 ^{TC = 125℃}
25
20
15
10
5
0
0
1
2
3
4
Forward Voltage, V_F [V]
Figure 18. Reverse Recovery Characteristics
20
10
T_rr
I_rr
1
0.1
3
Common Cathode
di/dt = 40A/us
T_C = 25℃
T_C = 100℃ --------
6
9
12
15
18
21
Forward Current, I_F [A]
7
FMS6G20US60 Rev. B1
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