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FMS6G20US60 Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – Compact & Complex Module
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Electrical Characteristics of IGBT @ Inverter TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
Gate - Emitter Leakage Current
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
IC = 20mA, VCE = VGE
IC = 20A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Tsc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Short Circuit Withstand Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
@ TC = 100°C
VCE = 300 V, IC = 20A,
VGE = 15V
600
--
--
V
--
0.6
--
V/°C
--
--
250
µA
--
--
± 100
nA
5.0
6.5
8.5
V
--
2.1
2.7
V
--
1277
--
pF
--
98
--
pF
--
21
--
pF
--
65
130
ns
--
100
200
ns
--
80
160
ns
--
100
200
ns
--
0.45
--
mJ
--
0.42
--
mJ
--
70
140
ns
--
100
200
ns
--
110
220
ns
--
210
350
ns
--
0.5
--
mJ
--
0.72
--
mJ
10
--
--
µs
--
55
65
nC
--
10
15
nC
--
20
30
nC
3
FMS6G20US60 Rev. B1
www.fairchildsemi.com
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