FMS6G20US60 Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – Compact & Complex Module

Electrical Characteristics of DIODE @ Inverter T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
V_FM
Diode Forward Voltage
I_F = 20A
T_C = 25°C
--
T_C = 100°C
--
t_rr
Diode Reverse Recovery Time
I_F = 20A
T_C = 25°C
--
di / dt = 40 A/us
T_C = 100°C
--
I_rr
Diode Peak Reverse Recovery Current
T_C = 25°C
--
T_C = 100°C
--
Q_rr
Diode Reverse Recovery Charge
T_C = 25°C
--
T_C = 100°C
--
Typ.
1.9
2.0
75
110
1.3
1.8
50
100
Max.
2.8
--
150
--
2.6
--
195
--
Units
V
ns
A
nC
Electrical Characteristics of DIODE @ Converter T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ.
V_FM
I_RRM
Diode Forward Voltage
Repetitive Reverse Current
I_F = 20A
V_R = V_RRM
T_C = 25°C
--
1.1
T_C = 100°C
--
1.0
T_C = 25°C
--
--
T_C = 100°C
--
5
Max.
1.5
--
8
--
Units
V
mA
Thermal Characteristics
Symbol
Parameter
Inverter
Converter
Weight
R_θJC
R_θJC
R_θJC
Junction-to-Case (IGBT Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Weight of Module
Typ.
--
--
--
60
Max.
1.4
2.3
1.5
--
Units
°C/W
°C/W
°C/W
g
NTC Thermistor Characteristics
Symbol
Parameter
Thermistor
R25
B(25/100)
Rated Resistance @ Tc = 25°C
B - Value
Tol.
+/- 5 %
+/- 3 %
Typ.
4.7
3530
Units
KΩ
4
FMS6G20US60 Rev. B1
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