SGS6N60UFD Datasheet, PDF (6/8 Pages) Fairchild Semiconductor – Ultra-Fast IGBT

100
T = 25℃
C
T = 100℃
C
10
1
0.1
0
1
2
3
4
Forward Voltage Drop, V_FM [V]
Fig 18. Forward Characteristics
300
V_R = 200V
I_F = 4A
250 ^TC ^{= 25℃}
T_C = 100℃
200
150
100
50
0
100
di/dt [A/us]
Fig 20. Stored Charge
1000
100
V_R=200V
I =4A
F
T_C = 25℃
T = 100℃
C
10
1
100
di/dt [A/us]
1000
Fig 19. Reverse Recovery Current
100
V_R=200V
I =4A
F
T_C = 25℃
80 T_C = 100℃
60
40
20
0
100
di/dt [A/us]
1000
Fig 21. Reverse Recovery Time
©2001 Fairchild Semiconductor Corporation
SGS6N60UFD Rev. A