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SGS6N60UFD Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Ultra-Fast IGBT
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30
Common Emitter
T = 25℃
C
25
20
20V
15V
15
12V
10
V = 10V
GE
5
0
0
2
4
6
8
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Chacracteristics
4
Common Emitter
V = 15V
GE
3
2
1
6A
3A
I = 1.5A
C
0
0
30
60
90
120
150
Case Temperature, TC [℃]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
T = 25℃
C
16
12
8
4
6A
3A
I = 1.5A
C
0
0
4
8
12
16
20
Gate - Emitter Voltage, V [V]
GE
Fig 5. Saturation Voltage vs. VGE
©2001 Fairchild Semiconductor Corporation
15
Common Emitter
V = 15V
GE
TC = 25℃
12 TC = 125℃
9
6
3
0
0.5
1
10
Collector - Emitter Voltage, VCE [V]
Fig 2. Typical Saturation Voltage
Characteristics
5
VCC = 300V
Load Current : peak of square wave
4
3
2
1
Duty cycle : 50%
T = 100℃
C
Power Dissipation = 5W
0
0.1
1
10
100
Frequency [KHz]
1000
Fig 4. Load Current vs. Frequency
20
Common Emitter
TC = 125℃
16
12
8
6A
4
3A
IC = 1.5A
0
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
SGS6N60UFD Rev. A
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