SGS6N60UFD Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – Ultra-Fast IGBT

400
350
300
250
200
150
100
50
0
1
Cies
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25℃
Coes
Cres
10
30
Collector - Emitter Voltage, V_CE [V]
Fig 7. Capacitance Characteristics
600
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 3A
T_C = 25℃
T_C = 125℃
100
50
1
10
100
Gate Resistance, R_G [Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Toff
Toff
Tf
Tf
400
200
Common Emitter
V_CC = 300V, V_GE = ± 15V
R_G = 80Ω
100 T_C = 25℃
T_C = 125℃
Ton
Tr
10
1
2
3
4
5
6
Collector Current, I_C [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
100
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 3A
Ton
T_C = 25℃
T_C = 125℃
Tr
10
1
10
100
400
Gate Resistance, R_G [Ω ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
300
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 3A
T_C = 25℃
100 T_C = 125℃
Eon
Eoff
Eoff
10
5
1
10
100
400
Gate Resistance, R_G [Ω]
Fig 10. Switching Loss vs. Gate Resistance
500
Common Emitter
V_CC = 300V, V_GE = ± 15V
R_G = 80Ω
T_C = 25℃
T_C = 125℃
Toff
100 _Tf
50
1
2
3
4
5
6
Collector Current, I_C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGS6N60UFD Rev. A