FGH60N60UFD Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 600V, 60A Field Stop IGBT

Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
300
100
t_r
Figure 14. Turn-off Characteristics vs.
Gate Resistance
6000
1000
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 60A
T_C = 25^oC
T_C = 125^oC
t_d(off)
10
0
t_d(on)
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 60A
T_C = 25^oC
T_C = 125^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
100
t_f
10
0
10
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 15. Turn-on Characteristics vs
Collector Current
500
Common Emitter
V_GE = 15V, R_G = 5Ω
T_C = 25^oC
T_C = 125^oC
t_r
100
Figure 16. Turn-off Characteristics vs.
Collector Current
1000
Common Emitter
V_GE = 15V, R_G = 5Ω
T_C = 25^oC
T_C = 125^oC
100
t_d(off)
t_d(on)
10
0
20 40 60 80 100 120
Collector Current, I_C [A]
t_f
30
0
20 40 60 80 100 120
Collector Current, I_C [A]
Figure 17. Switching Loss vs. Gate Resistance
20
Common Emitter
V_CC = 400V, V_GE = 15V
10 _{IC = 60A}
T_C = 25^oC
T_C = 125^oC
E_on
Figure 18. Switching Loss vs. Collector Current
20
Common Emitter
10 ^VGE ^{= 15V, R}G ^{= 5Ω}
T_C = 25^oC
E_on
T_C = 125^oC
E_off
1
1
E_off
0
10
20
30
40
50
Gate Resistance, R_G [Ω]
0.1
0
20 40 60 80 100 120
Collector Current, I_C [A]
FGH60N60UFD Rev. A
6
www.fairchildsemi.com