FGH60N60UFD Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 600V, 60A Field Stop IGBT

FGH60N60UFD
600V, 60A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: V_CE(sat) = 1.9V @ I_C = 60A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
August 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduc
tion and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test , Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(Diode)
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
G
E
Ratings
600
± 20
120
60
180
298
119
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.33
1.1
40
Units
V
V
A
A
A
W
W
o_C
o_C
o_C
Units
o_C/W
o_C/W
o_C/W
©2008 Fairchild Semiconductor Corporation
1
FGH60N60UFD Rev. A
www.fairchildsemi.com