FGH60N60UFD Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 600V, 60A Field Stop IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180
T_C = 25^oC
20V
150
15V
12V
120
10V
90
60
30
V_GE = 8V
0
0
2
4
6
8
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
180
Common Emitter
150
V_GE = 15V
T_C = 25^oC
120 ^{TC = 125oC}
90
60
30
0
0
1
2
3
4
5
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4.0
Common Emitter
V_GE = 15V
3.5
3.0
120A
2.5
2.0
60A
1.5
I_C = 30A
1.0
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
Figure 2. Typical Output Characteristics
180
T_C = 125^oC
150
20V
15V
12V
120
10V
90
60
V_GE = 8V
30
0
0
2
4
6
8
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
180
Common Emitter
V_CE = 20V
150 _{TC = 25oC}
T_C = 125^oC
120
90
60
30
0
0
1
2
3
4
5
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = -40^oC
16
12
8
120A
4
60A
I_C = 30A
0
0
3
6
9
12 15 18
Gate-Emitter Voltage, V_GE [V]
FGH60N60UFD Rev. A
4
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